RF Power | [W] | 70 |

ICP Power | [W] | 1500 |

Pressure | [mTorr] | 6 |

C4F8 | [sccm] | 45 |

O2 | [sccm] | 5 |

DC Bias | [V] | 132 |

Temperature | [°C] | 20 |

RF Power | [W] | 70 |

ICP Power | [W] | 500 |

Pressure | [mTorr] | 6 |

C4F8 | [sccm] | 45 |

O2 | [sccm] | 5 |

DC Bias | [V] | 218 |

Temperature | [°C] | 20 |

Helium | [°Torr] | 10 |

The selectivity of this process is approximately 0.6:1 for SiO2:HSQ for a range of ICP power from 350 to 1500 W. Curiously, we observe that at an ICP power of 200 W, the selectivity is 1.1. Read the SiO2:HSQ process development page for more details.

RF Power | [W] | 200 |

ICP Power | [W] | 0 |

Pressure | [mTorr] | 50 |

CHF3 | [sccm] | 50 |

O2 | [sccm] | 2 |

DC Bias | [V] | 400 |

Temperature | [°C] | 20 |

Helium | [Torr] | 10 |

According to the work of Ephrath1982, it is possible to achieve a selectivity of SiO2:PMMA of 5:1.

Cornell NananoScale Facility has recipes with reported selectivity of SiO2:Resist of 2:1.

RF Power | [W] | 200 |

ICP Power | [W] | 0 |

Pressure | [mTorr] | 50 |

CHF3 | [sccm] | 50 |

O2 | [sccm] | 2 |

Temperature | [°C] | 20 |

Helium | [Torr] | 10 |

RF Power | [W] | 300 |

ICP Power | [W] | 200 |

Pressure | [mTorr] | 30 |

CHF3 | [sccm] | 40 |

O2 | [sccm] | 2 |

Temperature | [°C] | 20 |

The etch rate of AZ appears to vary from 7-60 nm/min.

Common process parameters:

RF Power | [W] | 25 |

ICP Power | [W] | 700 |

Pressure | [mTorr] | 30 |

Temperature | [°C] | 15 |

Deposition step parameters:

C4F8 | [sccm] | 100 |

SF6 | [sccm] | 1 |

DC Bias | [V] | 150 |

Duration | [s] | 5 |

Etch step parameters:

C4F8 | [sccm] | 1 |

SF6 | [sccm] | 100 |

DC Bias | [V] | 150 |

Duration | [s] | 8 |

The Bosch process repeats a deposition step followed by an etch step many times to produce high aspect ratio etch with near vertical sidewalls. For this particular recipe, each cycle of deposition and etch removes approximately 572 nm of Si and 22 nm of AZ1512. The selectivity for this process is 26:1 for Si:AZ1512. This process has not been optimized and it may be possible to achieve a selectivity of up to 75:1.

RF Power | [W] | 30 |

ICP Power | [W] | 450 |

Pressure | [mTorr] | 10 |

SF6 | [sccm] | 30 |

C4F8 | [sccm] | 45 |

O2 | [sccm] | 3 |

Temperature | [°C] | 20 |

RF Power | [W] | 70 |

ICP Power | [W] | 0 |

Pressure | [mTorr] | 10 |

O2 | [sccm] | 50 |

DC Bias | [V] | 250 |

Temperature | [°C] | 20 |

Helium | [Torr] | 10 |

RF Power | [W] | 70 |

ICP Power | [W] | 0 |

Pressure | [mTorr] | 10 |

O2 | [sccm] | 50 |

DC Bias | [V] | 240 |

Temperature | [°C] | 20 |

Helium | [Torr] | 10 |

RF Power | [W] | 70 |

ICP Power | [W] | 0 |

Pressure | [mTorr] | 10 |

O2 | [sccm] | 50 |

DC Bias | [V] | 250 |

Temperature | [°C] | 20 |

Helium | [Torr] | 10 |

RF Power | [W] | 50 |

ICP Power | [W] | 0 |

Pressure | [mTorr] | 80 |

C4F8 | [sccm] | 100 |

DC Bias | [V] | 45 |

Temperature | [°C] | 20 |

Helium | [Torr] | 10 |

Time | [s] | 30 |

This anti-sticking layer (ASL) recipe is used to coat a mold before imprinting to prevent resist from sticking to the mold. The surface produced by this coating has a contact angle of 110°. This coating is sufficient for patterns 200 nm and larger. An alternative, more popular, method is demonstrated by Beck.

RF Power | [W] | 70 |

ICP Power | [W] | 0 |

Pressure | [mTorr] | 10 |

O2 | [sccm] | 50 |

DC Bias | [V] | 233 |

Temperature | [°C] | 20 |

Helium | [Torr] | 10 |

Time | [s] | 60 |

This recipe is used to improve the adhesion of photoresist to a Silicon wafer.